Low current and highly reliable operation at 80°C of 650nm 5mW LDs for DVD applications

Electronics Letters

Volumn 35, Issue 1, 1999, Pages 46-48

  Ohya, M ^a   Fujii, H ^a   Doi, K ^a   Endo, K ^a  

^a NEC CORPORATION   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

CURRENT DENSITY; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING INDIUM PHOSPHIDE; VIDEODISKS;

DIGITAL VERSATILE DISKS (DVD);

QUANTUM WELL LASERS;

EID: 0033531018     PISSN: 00135194     EISSN: None     Source Type: Journal    
DOI: 10.1049/el:19990011     Document Type: Article

References (4)

1. OHYA, M., FUJII, H., DOI, K., OKUDA, J., ANJIM, K., and ENDO, K.: 'Highly reliable operation at 80°C for 650nm 5mW AlGaInP LDs', Electron. Lett., 1997, 33, pp. 1636-1638
2. UENO, Y., FUJII, H., SAWANO, H., KOBAYASHI, K., HARA, K., GOMYO, A., and ENDO, K.: '30mW 690nm high-power strained-quantum-well AlGaInP laser', IEEE J. Quantum Electron., 1993, QE-29, pp. 1851-1856
3. FUJII, H., OKUDA, J., ENDO, K., YOSHII, H., KISHI, T., MAKITA, H., and YAMADA, H.: 'Low-threshold-current 670nm multiquantum-well laser diodes', Electron. Lett., 1994, 30, pp. 2140-2142
4. KOBAYASHI, R., HOTTA, H., MIYASAKA, F., HARA, K., and KOBAYASHI, K.: 'Real index-guided AlGaInP visible laser with high-bandgap energy AlInP current blocking layer grown by HCl-assisted metalorganic vapor phase epitaxy', IEEE J. Quantum Electron., 1995, QE-1, pp. 723-727