650-nm AlGaInP multiple-quantum-well lasers grown by metalorganic chemical vapor deposition using tertiarybutylphosphine

Applied Physics Letters

Volumn 83, Issue 4, 2003, Pages 596-598

  Dong, Jian Rong ^a   Teng, Jing Hua ^a   Chua, Soon Jin ^a   Foo, Boon Chin ^a   Wang, Yan Jun ^a   Yuan, Hai Rong ^a   Yuan, Shu ^b  

^a INSTITUTE OF MATERIALS RESEARCH AND ENGINEERING   (Singapore)

^b NANYANG TECHNOLOGICAL UNIVERSITY   (Singapore)

Author keywords

[No Author keywords available]

Indexed keywords

METALLORGANIC CHEMICAL VAPOR DEPOSITION; PHOTOLUMINESCENCE; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTOR GROWTH; X RAY DIFFRACTION ANALYSIS;

EPILAYERS;

QUANTUM WELL LASERS;

EID: 0043014909     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1593782     Document Type: Article

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