Effect of strain relaxation on forward bias dark currents in GaAs/InGaAs multiquantum well p-i-n diodes

Journal of Applied Physics

Volumn 80, Issue 10, 1996, Pages 5815-5820

  Griffin, P R ^a   Barnes, J ^a   Barnham, K W J ^a   Haarpaintner, G ^a   Mazzer, M ^a   Zanotti Fregonara, C ^a   Grunbaum E ^b   Olson, C ^a,d   Rohr, C ^a,e   David, J P R ^c   Roberts, J S ^c   Grey, R ^c   Pate, M A ^c  

^a IMPERIAL COLLEGE LONDON   (United Kingdom)

^b UNIVERSITY OF OXFORD   (United Kingdom)

^c UNIVERSITY OF SHEFFIELD   (United Kingdom)

^d The Cooper Union for the Advancement of Science and Art   (United States)

^e Department of Obstetrics Gynecology   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0003169808     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.363574     Document Type: Review

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