Effect of gate recessing on linearity characteristics of AlGaN/GaN HEMTs

Device Research Conference - Conference Digest, DRC

Volumn , Issue , 2004, Pages 33-34

  Chini, A ^a   Buttari, D ^a   Coffie, R ^a   Shen, L ^a   Palacios, T ^a   Heikman, S ^a   Chakraborty, A ^a   Keller, S ^a   Mishra, U K ^a  

^a University of California   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

DRAIN CURRENTS; GATE RECESSING; POWER ADDED EFFICIENCY (PAE); UNRECESSED DEVICES;

ETCHING; GATES (TRANSISTOR); OPTIMIZATION; SAPPHIRE; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING GALLIUM COMPOUNDS; SUBSTRATES;

HETEROJUNCTIONS;

EID: 18044398547     PISSN: 15483770     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/DRC.2004.1367770     Document Type: Conference Paper

References (3)

1. Y. Nakasha et al. IEDM'99, Dec 1999, pp. 405-408.
2. A. Chini et al, Electronics Letters, Vol. 39 Issue 7, 3 Apr 2003, pp.625-626.
3. D. Buttari et al, Appl. Phys.Letter. Vol. 83(23) pp. 4779-4781. December 8, 2003.