Annealing behavior of Al-implantation-induced disorder in 4H-SiC

Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms

Volumn 219-220, Issue 1-4, 2004, Pages 647-651

  Zhang, Y ^a   Weber, W J ^a   Jiang, W ^a   Shutthanandan, V ^a   Thevuthasan, S ^a   Janson, M ^b   Hallen A ^b  

^a PACIFIC NORTHWEST NATIONAL LABORATORY   (United States)

^b ROYAL INSTITUTE OF TECHNOLOGY   (Sweden)

Author keywords

Annealing; Defect; Ion implantation; Rutherford backscattering spectrometry; Secondary ion mass spectroscopy; SiC

Indexed keywords

ALUMINUM; ANNEALING; BACKSCATTERING; CRYSTAL DEFECTS; ION IMPLANTATION; RUTHERFORD BACKSCATTERING SPECTROSCOPY; SECONDARY ION MASS SPECTROMETRY; THERMAL EFFECTS;

EPITAXIAL LAYERS; INTERSTITIALS; RESIDUAL CRYSTALLINE DISORDER; SIC;

SILICON CARBIDE;

EID: 2442478187     PISSN: 0168583X     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.nimb.2004.01.135     Document Type: Conference Paper

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