Formation of bubbles and extended defects in He implanted (1 0 0) Si at elevated temperatures

Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms

Volumn 219-220, Issue 1-4, 2004, Pages 713-717

  Da Silva, Douglas L ^a   Mörschbächer, Marcio J ^a   Fichtner, Paulo F P ^a   Oliviero, Erwan ^a   Behar, Moni ^a  

^a FEDERAL UNIVERSITY OF RIO GRANDE DO SUL   (Brazil)

Author keywords

Bubble nucleation; Extended defects; He retention; Silicon

Indexed keywords

ANNEALING; BUBBLES (IN FLUIDS); HELIUM; MICROSTRUCTURE; NUCLEATION; RUTHERFORD BACKSCATTERING SPECTROSCOPY; SILICON WAFERS; TRANSMISSION ELECTRON MICROSCOPY;

BUBBLE NUCLEATION; DEFECT FORMATION; EXTENDED DEFECTS; HE RETENTION;

ION IMPLANTATION;

EID: 2442473748     PISSN: 0168583X     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.nimb.2004.01.148     Document Type: Conference Paper

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