Pressure effect in sublimation growth of bulk SiC

Materials Science Forum

Volumn 338, Issue , 2000, Pages

  Kitou, Yasuo ^a   Bahng, Wook ^b   Nishizawa, Shin Ichi ^b   Nishino, Shigehiro ^c   Arai, Kazuo ^b  

^a R and D Assoc Fut Electron Devices   (Japan)

^b ELECTROTECHNICAL LABORATORY   (Japan)

^c KYOTO INSTITUTE OF TECHNOLOGY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ALUMINUM; COMPOSITION EFFECTS; CRYSTAL DEFECTS; CRYSTAL GROWTH; CRYSTAL IMPURITIES; PRECIPITATION (CHEMICAL); PRESSURE EFFECTS; SECONDARY ION MASS SPECTROMETRY; SEMICONDUCTING SILICON COMPOUNDS; SEMICONDUCTOR GROWTH; SINGLE CRYSTALS; SUBLIMATION;

VOIDS;

SILICON CARBIDE;

EID: 12944309906     PISSN: 02555476     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Article

References (7)

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