Magnetization switching and tunneling magnetoresistance effects of synthetic antiferromagnet free layers consisting of amorphous NiFeSiB

Applied Physics Letters

Volumn 87, Issue 8, 2005, Pages

  Chun, Byong Sun ^a   Yoo, Ilsang ^a   Kim, Young Keun ^a   Hwang, Jae Youn ^b   Rhee, Jang Roh ^b   Kim, Taewan ^c   Park, Wanjun ^c  

^a Korea University   (South Korea)

^b Sookmyung Women's University   (South Korea)

^c Samsung Advanced Institute of Technology (SAIT)   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

MAGNETIC TUNNEL JUNCTIONS (MTJS); MAGNETIZATION SWITCHING; SWITCHING CHARACTERISTICS; SYNTHETIC ANTIFERROMAGNET (SAF) STRUCTURE;

AMORPHOUS MATERIALS; COERCIVE FORCE; ELECTRON TUNNELING; FERROMAGNETIC MATERIALS; MAGNETIC ANISOTROPY; MAGNETIZATION; MAGNETORESISTANCE; NICKEL COMPOUNDS; SWITCHING; TUNNEL JUNCTIONS;

ANTIFERROMAGNETIC MATERIALS;

EID: 24344508180     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2033128     Document Type: Article

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