Transistor effects and in Situ STM of redox molecules at room temperature

IEEE Transactions on Nanotechnology

Volumn 4, Issue 4, 2005, Pages 430-433

  Albrecht, Tim ^a   Guckian, Adrian ^b   Ulstrup, Jens ^a   Vos, Johannes G ^b  

^a TECHNICAL UNIVERSITY OF DENMARK   (Denmark)

^b DUBLIN CITY UNIVERSITY   (Ireland)

Author keywords

Charge transfer; Conductivity; Molecular electronics; Resonant tunneling transistors; Transition metal compounds

Indexed keywords

CHARGE TRANSFER; COMPLEXATION; ELECTRIC CONDUCTIVITY; ELECTROCHEMISTRY; ELECTRODES; FERMI LEVEL; RESONANCE; SCANNING TUNNELING MICROSCOPY; TRANSITION METAL COMPOUNDS;

CHARGE TRANSFER THEORY; ELECTRODE SURFACES; MOLECULAR ELECTRONICS; RESONANT TUNNELLING TRANSISTORS;

TRANSISTORS;

EID: 24344445910     PISSN: 1536125X     EISSN: None     Source Type: Journal    
DOI: 10.1109/TNANO.2005.851280     Document Type: Article

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