Single-molecule electron tunnelling through multiple redox levels with environmental relaxation

Journal of Electroanalytical Chemistry

Volumn 564, Issue 1-2, 2004, Pages 209-222

  Kuznetsov, Alexander M ^a   Ulstrup, Jens ^b  

^a FRUMKIN INSTITUTE OF PHYSICAL CHEMISTRY AND ELECTROCHEMISTRY   (Russian Federation)

^b TECHNICAL UNIVERSITY OF DENMARK   (Denmark)

Author keywords

In situ STM; Single electron tunnelling; Single molecule transistor

Indexed keywords

ELECTRIC POTENTIAL; ELECTROCHEMICAL ELECTRODES; ELECTRON TRANSITIONS; FERMI LEVEL; GATES (TRANSISTOR); MOLECULES; NANOSTRUCTURED MATERIALS; SCANNING TUNNELING MICROSCOPY; SUBSTRATES; TRANSISTORS;

IN SITU SCANNING TUNNELLING MICROSCOPY (STM); SINGLE ELECTRON TUNNELLING; SINGLE MOLECULE TRANSISTORS;

ELECTRON TUNNELING;

EID: 1342328142     PISSN: 15726657     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jelechem.2003.10.048     Document Type: Article

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