Breakdown of the simple kinematic approximation models in high-resolution LEED characterization of the initial growth of Si/Si(111)

Surface Science

Volumn 482-485, Issue PART 2, 2001, Pages 1355-1361

  Esser, Marcus ^a   Wormeester, Herbert ^a   Poelsema, Bene ^a  

^a UNIVERSITY OF TWENTE   (Netherlands)

Author keywords

Growth; Low energy electron diffraction (LEED); Low index single crystal surfaces; Semiconducting surfaces; Silicon; Surface defects

Indexed keywords

EID: 24244480867     PISSN: 00396028     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0039-6028(01)00932-3     Document Type: Article

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