A 1 bit binary-decision-diagram adder circuit using single-electron transistors made by selective-area metalorganic vapor-phase epitaxy

Applied Physics Letters

Volumn 87, Issue 3, 2005, Pages

  Miyoshi, Yoshihito ^a   Nakajima, Fumito ^a   Motohisa, Junichi ^a   Fukui, Takashi ^a  

^a HOKKAIDO UNIVERSITY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

BINARY-DECISION-DIAGRAM ADDERS; COULOMB BLOCKADE (CB); SINGLE-ELECTRON TUNNELING TRANSISTORS (SET);

FABRICATION; GALLIUM COMPOUNDS; LOGIC CIRCUITS; LOGIC GATES; METALLORGANIC VAPOR PHASE EPITAXY;

ADDERS;

EID: 24144454190     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1992665     Document Type: Article

References (14)

1. K. K. Likharev, Proc. IEEE 87, 606 (1999).
2. Single Charge Tunneling, edited by, H. Grabert, and, M. Devoret, (New York, 1992).
3. F. Nakajima, Y. Miyoshi, J. Motohisa, and T. Fukui, Appl. Phys. Lett. 83, 2680 (2003).
4. F. Nakajima, K. Kumakura, J. Motohisa, and T. Fukui, Jpn. J. Appl. Phys., Part 1 38, 415 (1999).
5. N. J. Stone and H. Ahmed, Electron. Lett. 35, 1883 (1999).
6. Y. Ono, Y. Takahashi, K. Yamazaki, M. Nagase, H. Namatsu, K. Kurihara, and K. Murase, Appl. Phys. Lett. 76, 3121 (2000).
7. C. P. Heij, P. Hadley, and J. E. Mooij, Appl. Phys. Lett. 78, 1140 (2001).
8. S. B. Akers, IEEE Trans. Comput. C-27, 509 (1978).
9. F. Nakajima, Y. Ogasawara, J. Motohisa, and T. Fukui, Physica E (Amsterdam) 13, 703 (2002).
10. N. Asahi, M. Akazawa, and Y. Amemiya, IEEE Trans. Electron Devices 44, 1109 (1997).
11. S. Kasai and H. Hasegawa, IEEE Electron Device Lett. 23, 446 (2002).
12. F. Nakajima, Y. Ogasawara, J. Motohisa, and T. Fukui, J. Appl. Phys. 90, 2606 (2001).
13. Y. Takahashi, A. Fujiwara, K. Yamazaki, H. Namatsu, K. Kurihara, and K. Murase, Appl. Phys. Lett. 76, 637 (2000).
14. J. Motohisa, F. Nakajima, T. Fukui, W. G. van der Wiel, J. M. Elzermann, S. De Franceschi, and L. P. Kouwenhoven, Appl. Phys. Lett. 80, 2797 (2002).