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Applied Physics Letters

Volumn 80, Issue 15, 2002, Pages 2797-2799

Fabrication and low-temperature transport properties of selectively grown dual-gated single-electron transistors

(7) Motohisa, J a Nakajima, F a Fukui, T a Van Der Wiel, W G b Elzerman, J M b De Franceschi, S b Kouwenhoven, L P b

a HOKKAIDO UNIVERSITY (Japan)

b DELFT UNIVERSITY OF TECHNOLOGY (Netherlands)

Author keywords

[No Author keywords available]

Indexed keywords

CARRIER CONFINEMENTS; COULOMB DIAMONDS; COULOMB OSCILLATION; DIRECT GROWTH; LOW TEMPERATURES; MAGNETIC FIELD DEPENDENCES; METAL GATE; METAL-ORGANIC VAPOR PHASE EPITAXY; SELECTIVE AREA GROWTH; SINGLE ELECTRON;

FABRICATION; MAGNETIC FIELDS; QUANTUM CHEMISTRY; TRANSIENTS; TRANSPORT PROPERTIES;

SINGLE ELECTRON TRANSISTORS;

EID: 79956012386 PISSN: 00036951 EISSN: None Source Type: Journal
DOI: 10.1063/1.1470246 Document Type: Article

Times cited : (6)

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