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Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 38, Issue 1 B, 1999, Pages 415-417

GaAs Single Electron Transistors Fabricated by Selective Area Metalorganic Vapor Phase Epitaxy and Their Application to Single Electron Logic Circuits

(4) Nakajima, Fumito a Kumakura, Kazuhide a,b Motohisa, Junichi a Fukui, Takasi a

a HOKKAIDO UNIVERSITY (Japan)

b NTT Basic Research Laboratories (Japan)

Author keywords

Resistance load inverter circuit; Selective area MOVPE; SET; Single electron logic

Indexed keywords

ELECTRIC INVERTERS; ELECTRIC POTENTIAL; ELECTRIC RESISTANCE; ELECTRON TUNNELING; ELECTROSTATICS; GATES (TRANSISTOR); LOGIC CIRCUITS; METALLORGANIC VAPOR PHASE EPITAXY; NANOTECHNOLOGY; SEMICONDUCTING GALLIUM ARSENIDE;

COULOMB GAPS; COULOMB OSCILLATIONS; SINGLE ELECTRON LOGIC; SINGLE ELECTRON TRANSISTORS (SET);

SEMICONDUCTOR QUANTUM DOTS;

EID: 0032613823 PISSN: 00214922 EISSN: None Source Type: Journal
DOI: 10.1143/JJAP.38.415 Document Type: Article

Times cited : (14)

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