Capacitance study of selectively doped SiGe/Si heterostructures

Semiconductor Science and Technology

Volumn 20, Issue 5, 2005, Pages 335-339

  Antonova, I V ^a   Obodnikov, V I ^a   Kagan, M S ^b   Troeger, R T ^c   Ray, S K ^c   Kolodzey, J ^c  

^a INSTITUTE OF SEMICONDUCTOR PHYSICS   (Russian Federation)

^b INSTITUTE OF RADIO ENGINEERING AND ELECTRONICS   (Russian Federation)

^c UNIVERSITY OF DELAWARE   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; BORON; CAPACITANCE; CARRIER CONCENTRATION; DOPING (ADDITIVES); ELECTRIC POTENTIAL; HYDROGEN; SEMICONDUCTOR QUANTUM WELLS;

ADDITIONAL ANNEALING; CARRIER DISTRIBUTION; SURFACE CHARGE; UNDER VOLTAGE;

HETEROJUNCTIONS;

EID: 24144448574     PISSN: 02681242     EISSN: None     Source Type: Journal    
DOI: 10.1088/0268-1242/20/5/001     Document Type: Article

References (11)

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