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Physica Status Solidi (B) Basic Research

Volumn 235, Issue 1, 2003, Pages 135-138

THz lasing of SiGe/Si quantum-well structures due to shallow acceptors

(7) Kagan, M S a Altukhov, I V a Chirkova, E G a Sinis, V P a Troeger, R T b Ray, S K b Kolodzey, J b

a INSTITUTE OF RADIO ENGINEERING AND ELECTRONICS (Russian Federation)

b UNIVERSITY OF DELAWARE (United States)

Author keywords

[No Author keywords available]

Indexed keywords

BORON; ELECTRIC FIELDS; INTERFACES (MATERIALS); MOLECULAR BEAM EPITAXY; MONOCHROMATORS; PHOTODETECTORS; SEMICONDUCTING SILICON COMPOUNDS; SEMICONDUCTOR DOPING; STIMULATED EMISSION; SUBSTRATES;

OPTICAL TRANSITIONS; RESONANT STATE LASERS (RSL);

SEMICONDUCTOR QUANTUM WELLS;

EID: 1242265019 PISSN: 03701972 EISSN: None Source Type: Journal
DOI: 10.1002/pssb.200301536 Document Type: Conference Paper

Times cited : (17)

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