Influence of oxygen content on dielectric and electromechanical properties of Pb(Mg1/3Nb2/3)O3 thin films

Applied Physics Letters

Volumn 74, Issue 20, 1999, Pages 3035-3037

  Catalan, G ^a   Corbett, M H ^a   Bowman, R M ^a   Gregg, J M ^a  

^a QUEEN'S UNIVERSITY BELFAST   (United Kingdom)

Author keywords

[No Author keywords available]

Indexed keywords

CAPACITANCE MEASUREMENT; DEPOSITION; DIELECTRIC RELAXATION; ELECTRIC LOSSES; FILM GROWTH; LEAKAGE CURRENTS; PULSED LASER APPLICATIONS; SEMICONDUCTING LEAD COMPOUNDS; STRAIN; THIN FILM DEVICES; TRANSMISSION ELECTRON MICROSCOPY; X RAY CRYSTALLOGRAPHY;

CRYSTALLOGRAPHIC STRAIN; THIN FILM PLANAR CAPACITORS;

CAPACITORS;

EID: 0032620182     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.124056     Document Type: Article

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