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Volumn 5756, Issue , 2005, Pages 120-130

Optical extensions integration for a 0.314μm2 45nm node 6-transistor SRAM cell

Author keywords

[No Author keywords available]

Indexed keywords

IMAGE PROCESSING; OPTICAL RESOLVING POWER; OPTIMIZATION; PRODUCT DESIGN; STATIC RANDOM ACCESS STORAGE; TRANSISTORS;

EID: 24044512842     PISSN: 0277786X     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1117/12.600862     Document Type: Conference Paper
Times cited : (9)

References (8)
  • 1
    • 25144489383 scopus 로고    scopus 로고
    • Challenges in patterning 45nm node multiple-gate devices and SRAM cells
    • Monique Ercken, et. al., "Challenges in Patterning 45nm Node Multiple-Gate Devices and SRAM cells", Interface 2004 (2004)
    • (2004) Interface 2004
    • Ercken, M.1
  • 2
    • 0035758402 scopus 로고    scopus 로고
    • Optimum mask and source patterns to print a given shape
    • A. Rosenbluth, "Optimum Mask and Source Patterns to Print a Given Shape", Proc. of SPIE, vol. 4346, p. 486 (2001).
    • (2001) Proc. of SPIE , vol.4346 , pp. 486
    • Rosenbluth, A.1
  • 3
    • 3843079511 scopus 로고    scopus 로고
    • Optical lithography in the sub-50nm regime
    • D. G. Flagello, et. al., "Optical lithography in the sub-50nm regime", Proc. SPIE, vol. 5377, p. 21 (2004)
    • (2004) Proc. SPIE , vol.5377 , pp. 21
    • Flagello, D.G.1
  • 4
    • 1842475075 scopus 로고    scopus 로고
    • Near 0.3 kl full-pitch range contact hole patterning using chromeless phase lithography (CPL)
    • D. J. Van Den Broeke, et. al., "Near 0.3 kl full-pitch range contact hole patterning using chromeless phase lithography (CPL)", Proc. of SPIE, vol. 5256, p. 297 (2003)
    • (2003) Proc. of SPIE , vol.5256 , pp. 297
    • Van Den Broeke, D.J.1
  • 5
    • 3843105673 scopus 로고    scopus 로고
    • Contact hole reticle optimization by using interference mapping lithography (IMLTM)
    • R. Socha, et. al., "Contact Hole Reticle Optimization by Using Interference Mapping Lithography (IMLTM)", Proc. of SPIE, vol. 5377, p. 223 (2004)
    • (2004) Proc. of SPIE , vol.5377 , pp. 223
    • Socha, R.1
  • 6
    • 25144444017 scopus 로고    scopus 로고
    • Lithographic performance of a dual stage, 0.93NA ArF step and scan system
    • to be published
    • R. Rubingh, et. al., "Lithographic performance of a dual stage, 0.93NA ArF step and scan system", Proc. of SPIE, vol. 5754, to be published (2005)
    • (2005) Proc. of SPIE , vol.5754
    • Rubingh, R.1
  • 7
    • 21644472774 scopus 로고    scopus 로고
    • 2 6T-SRAM cell build with tall triple-gate devices for 45nm node applications using 0.75NA 193nm lithography
    • 2 6T-SRAM Cell build with Tall Triple-Gate Devices for 45nm node applications using 0.75NA 193nm lithography", IEDM 2004, p.269 (2004)
    • (2004) IEDM 2004 , pp. 269
    • Nackaerts, A.1
  • 8
    • 33745171087 scopus 로고    scopus 로고
    • 2 6T-SRAM cell and advanced CMOS logic circuits
    • to be published
    • 2 6T-SRAM Cell and Advanced CMOS Logic Circuits", Symp. On VLSI Technology 2005, to be published (2005)
    • (2005) Symp. on VLSI Technology 2005
    • Witters, L.1


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.