Lithographic performance of a dual stage, 0.93NA ArF step & scan system

Proceedings of SPIE - The International Society for Optical Engineering

Volumn 5754, Issue PART 2, 2005, Pages 681-692

  Rubingh, Rian ^a   Moers, Marco ^a   Suddendorf, Manfred ^a   Vanoppen, Peter ^a   Kisteman, Aernout ^a   Thier, Michael ^b   Blahnik, Vladan ^b   Piper, Eckhard ^b  

^a ASML   (Netherlands)

^b CARL ZEISS SMT AG   (Germany)

Author keywords

193 nm; CD uniformity; Dual stage; Productivity; Ultra high NA

Indexed keywords

IMAGING SYSTEMS; OPTICAL RESOLVING POWER; OPTICAL SYSTEMS; PRODUCTIVITY; SEMICONDUCTOR DEVICE MANUFACTURE;

193 NM; CD UNIFORMITY; DUAL STAGE; ULTRA HIGH NA;

PHOTOLITHOGRAPHY;

EID: 25144444017     PISSN: 0277786X     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1117/12.599805     Document Type: Conference Paper

References (7)

1. Peter Dirksen, Latent image metrology for production of wafer steppers. SPIE Vol. 2440, 1995
2. Jos de Klerk, Performance of a high NA, Dual Stage 193 nm TWINSCAN Step & Scan System for 80 nm Applications, SPIE 2003
3. J.P. Kirk, Scattered light in photolithographic lenses. SPIE Vol. 2197 (1994). p566-572
4. Mark van de Kerkhof, Integrated wavefront sensor, poster SPIE 2003
5. Carsten Kohler. Imaging Enhancements by Polarized Illumination: Theory and Experimental Verification, paper SPIE 2005 (to be published)
6. Koen van Ingen Schenau, Scatterometer based CD analysis and prediction with novel reticle measurement technique, poster SPIE 2005 (to be published)
7. 1 Full Pitch Range Contact Hole Patterning Using Chromeless Phase Lithography (CPL™). BACUS 2003