Metamorphic GaAs HEMTs with fT of 200 GHz

Electronics Letters

Volumn 35, Issue 13, 1999, Pages 1114-1115

  Edgar, D L ^a   Cameron, N I ^a   McLelland, H ^a   Holland, M C ^a   Taylor, M R S ^a   Thayne, I G ^a   Stanley, C R ^a   Beaumont, S P ^a  

^a UNIVERSITY OF GLASGOW   (United Kingdom)

Author keywords

[No Author keywords available]

Indexed keywords

CURRENT VOLTAGE CHARACTERISTICS; ELECTRON BEAM LITHOGRAPHY; GOLD; METALLIZING; MILLIMETER WAVES; MOLECULAR BEAM EPITAXY; MONOLITHIC MICROWAVE INTEGRATED CIRCUITS; PALLADIUM; SEMICONDUCTING INDIUM GALLIUM ARSENIDE; SEMICONDUCTOR SUPERLATTICES; THRESHOLD VOLTAGE; TITANIUM;

INDIUM GALLIUM ARSENIDE;

HIGH ELECTRON MOBILITY TRANSISTORS;

EID: 0032644109     PISSN: 00135194     EISSN: None     Source Type: Journal    
DOI: 10.1049/el:19990717     Document Type: Article

References (6)

1. 1-x-yAs buffer layers on GaAs', Appl. Phys. Lett., 1996, 69, (3), pp. 412-414
2. AGARWAL, B., SCHMITZ, A.E., BROWN, J.J., LE, M., LUI M., and RODWELL, M.J.W.: 'A 1-157GHz InP HEMT travelling-wave amplifier'. IEEE RFIC Symp. Dig., 1998, pp. 21-23
3. LAI, R., BARSKY, M., HUANG, T., SHOLLEY, M., WANG, H., KOK, Y.L., STREIT, D.C., BLOCK, T., LIU, P.H., GAIER, T., and SAMOSKA, L.: 'An InP HEMT MMIC LNA with 7.2-dB gain at 190 GHz', IEEE Microw. Guid. Wave Lett., 1998, 8, (11), pp. 393-395
4. EDGAR, D.L., MCLELLAND, H., FERGUSON, S., CAMERON, N.I., HOLLAND, M., THAYNE, I.G., TAYLOR, M.R.S., STANLEY, C.R., and BEAUMONT, S.P.: '94 and 150GHz coplanar waveguide MMIC amplifiers realized using InP technology', to be published in IEEE MTTS, June 1999
5. CHERTOUCK, M., HEIß, H., XU, D., KRAUS, S., KLEIN, W., BÖHM, G., TRÄNKLE, G., and WEIMANN, G.: 'Metamorphic InAlAs/InGaAs HEMTs on GaAs substrates with composite channels and Fmax of 350 GHz'. 7th Indium Phosphide and Related Materials Conf., 1995, pp. 737-740
6. 0.6As HEMT's on GaAs substrate', IEEE Electron Device Lett., 1999, 30, (3) pp. 123-125