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Chemical Physics Letters

Volumn 412, Issue 4-6, 2005, Pages 347-352

H atom-induced oxidation reaction on water-terminated Si surface, 2H + H2O/Si(1 0 0)-(2 × 1): A theoretical study

(7) Watanabe, Hidekazu a Wang, Zhi Hong b Nanbu, Shinkoh c Maki, Jun a Urisu, Tsuneo c Aoyagi, Mutsumi a Ooi, Kenta d

a KYUSHU UNIVERSITY (Japan)

b NAGOYA UNIVERSITY (Japan)

c INSTITUTE FOR MOLECULAR SCIENCE (Japan)

d NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL SCIENCE AND TECHNOLOGY AIST (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRON ENERGY LEVELS; HYDROGEN; LIGHT ABSORPTION; MOLECULAR DYNAMICS; QUENCHING; RELAXATION PROCESSES; SILICON; SURFACE CHEMISTRY; WATER;

ABSORPTION BANDS; MOLECULAR ORBITAL METHODS; REACTIVITY; SILICON SURFACES;

OXIDATION;

EID: 23944469841 PISSN: 00092614 EISSN: None Source Type: Journal
DOI: 10.1016/j.cplett.2005.07.023 Document Type: Article

Times cited : (2)

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