Pattern formation on silicon-on-insulator

Materials Research Society Symposium Proceedings

Volumn 849, Issue , 2005, Pages 139-147

  Flack, Frank S ^a   Yang, Bin ^a   Huang, Minghuang ^b   Marcus, Matt ^a   Simmons, Jason ^a   Castellini, Olivia M ^a   Eriksson, Mark A ^a   Liu, Feng ^b   Lagally, Max G ^a  

^a Wisconsin Electric Machines and Power Electronics Consortium   (United States)

^b UNIVERSITY OF UTAH   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CARBON NANOTUBES; FREE ENERGY; GERMANIUM; LITHOGRAPHY; NANOSTRUCTURED MATERIALS; SELF ASSEMBLY;

DEWETTING PROCESSES; LOW-ENERGY ELECTRON MICROSCOPY (LEEM); SURFACE FREE ENERGY;

SILICON ON INSULATOR TECHNOLOGY;

EID: 23844541663     PISSN: 02729172     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (29)

1. W.M. Kane, J.P. Spratt, and L.W. Hershinger, J. Appl. Phys. 37, 2085-2089 (1966).
2. P. Scharnhorst, Surf. Sci. 15, 380-6 (1969).
3. R.E. Hummel, R.T. DeHoff, S. Matts-Goho, and W.M. Goho, Thin Solid Films 78, 1-14 (1981).
4. J.-Y. Kwon, T.-S. Yoon, K.-B. Kim, and S.-H. Min, J. Appl. Phys. 93, 3270-8 (2003).
5. D.J. Srolovitz, W. Yang, and M.G. Goldiner in Polycrystalline Thin Films: Structure, Texture, Properties, and Applications II, edited by H.J. Frost, M.A. Parker, C.A. Ross, and E.A. Holm, (Mater. Res. Soc. Symp. Proc. 403, Pittsburgh, Pa, 1996), pp. 3-13.
6. A.R. Woll, P. Moran, E.M. Rehder, B. Yang, T.F. Kuech, and M.G. Lagally in Current Issues in Heteroepitaxial Growth - Stress Relaxation and Self Assembly, edited by E. Stach, E. Chason, R. Hull, and S. Bader, (Mater. Res. Soc. Symp. Proc. 696, Pittsburgh, Pa, 2002), pp. 119-24.
7. S. Yamamoto, S. Masuda, H. Yasufuku, N. Ueno, Y. Harada, T. Ichinokawa, M. Kato, and Y. Sakai, J. Appl. Phys. 82, 2954-2960 (1997).
8. Y. Ding, S. Yamamuro, D. Farrell, and S.A. Majetich, J. Appl. Phys. 93, 7411-7413 (2003).
9. K. Yamagata and T. Yonehara, Appl. Phys. Lett. 61, 2557-9 (1992).
10. Y. Ono, M. Nagase, M. Tabe, and Y. Takahashi, Jpn. J. Appl. Phys, Pt 1 34, 1728-35 (1995).
11. N. Sugiyama, T. Tezuka, and A. Kurobe, J. Cryst. Growth 192, 395-401 (1998).
12. B. Legrand, V. Agache, T. Melin, J.P. Nys, V. Senez, and D. Stievenard, J. Appl. Phys. 91, 106-11 (2002).
13. R. Nuryadi, Y. Ishikawa, and M. Tabe, Appl. Surf. Sci. 159-160, 121-6 (2000).
14. Y. Ishikawa, Y. Imai, H. Ikeda, and M. Tabe, Appl. Phys. Lett. 83, 3162-4 (2003).
15. D.J. Eaglesham, A.E. White, L.C. Feldman, N. Moriya, and D.C. Jacobson, Phys. Rev. Lett. 70, 1643-6 (1993).
16. J.M. Bermond, J.J. Metois, X. Egea, and F. Floret, Suf. Sci. 330, 48-60 (1995).
17. K.D. Brommer, M. Needels, B.E. Larson, and J.D. Joannopoulos, Phys. Rev. Lett. 68, 1355-8 (1992).
18. J. Dabrowski, H.-J. Mussig, and G. Wolff, Phys. Rev. Lett. 73, 1660-3 (1994).
19. A. Laracuente, S.C. Erwin, and L.J. Whitman, Phys. Rev. Lett. 81, 5177-80 (1998).
20. B. Yang, P. Zhang, M.G. Lagally,G.-H. Lu, M. Huang, and F. Liu, Submitted to Physical Review Letters.
21. L. Rayleigh, Proc. London Math. Soc. 10, 4 (1878).
22. F. Liu, F. Wu, and M.G. Lagally, Chem. Rev. 97, 1045-1061 (1997).
23. F. Wu and M.G. Lagally, Phys. Rev. Lett., 75, 2534 (1995).
24. N.R. Franklin and H. Dai, Adv. Mat. 12, 890-894 (2000).
25. T. Kitajima, B. Liu, and S.R. Leone, Appl. Phys. Lett. 80, 497 (2002).
26. Y. Homma, Y. Kobayashi, T. Ogino, and T. Yamashita, Appl. Phys. Lett. 81, 2261 (2002).
27. Y.J. Jung, Y. Homma, T. Ogino, Y. Kobayashi, D. Takagi, B. Wei, R. Vajtai, and P.M. Ajayan, J. Phys. Chem. B 107, 6859-6864 (2003).
28. 2 at room temperature and 1 Torr). The Knudsen number is much smaller than 0.01. Thus, the gas flow can be modeled by continuum theory.
29. Y. Hu, C. Werner, and D. Li, J. Fluids Eng. 125, 871-879 (2003).