Optimization of impurity profile for p-n-junction in heterostructures

European Physical Journal B

Volumn 46, Issue 1, 2005, Pages 15-19

  Pankratov, E L ^a   Spagnolo, B ^b  

^a INSTITUTE FOR PHYSICS OF MICROSTRUCTURES   (Russian Federation)

^b UNIVERSITY OF PALERMO   (Italy)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; BOUNDARY CONDITIONS; CAPACITANCE; CURRENT DENSITY; DIFFUSION; ELECTRIC CONDUCTIVITY; EPITAXIAL GROWTH; INTEGRATED CIRCUITS; ION IMPLANTATION; OPTIMIZATION;

DIFFUSION EQUATIONS; III-V SEMICONDUCTOR-TO-SEMICONDUCTOR CONTACTS; IMPURITY DOPING, DIFFUSION AND ION IMPLANTATION TECHNOLOGY; P-N-JUNCTIONS;

HETEROJUNCTIONS;

EID: 23844469485     PISSN: 14346028     EISSN: None     Source Type: Journal    
DOI: 10.1140/epjb/e2005-00233-1     Document Type: Article

References (15)

1. A.B. Grebene Bipolar and MOS analogous integrated circuit design (New York, John Wiley and Sons, 1983)
2. T. Oka, K. Ouchi, K. Mochizuki, T. Nakamura, Solid State Electronics 41, 1611 (1997)
3. I. Zutic, Y. Fabian, S. Das Sarma, Phys. Rev. B 64, 121201 (2001)
4. S.T. Sisianu, T.S. Sisianu, S.K. Railean, Semiconductors 36, 581 (2002)
5. W.M. Chen, I.A. Buyanova, A.V. Buyanov et al., Phys. Rev. Lett. 77, 2734 (1996)
6. P. Laitinen, A. Strohm, A. Neiminen et al., Phys. Rev. Lett. 89, 085902 (2002)
7. P. Laitinen, Riihimäki, Räisänen et al., Phys. Rev. B 68, 155209 (2003)
8. T. Oka, K. Hirata, H. Suzuki et al., Int. J. of High Speed Electronics and System, 11, 115 (2001)
9. R.N. Ghoshtagore, Phys. Rev. B 3, 397 (1971);
10. R.N. Ghoshtagore, Phys. Rev. B 3, 2507 (1971)
11. P.M. Fahey, P.B. Griffin, J.D. Plummer, Rev. Mod. Phys. 61, 289 (1989)
12. B.A. Zon, S.B. Ledovskiy, A.N. Likholet, Technical Physics 45, 419 (2000)
13. Y.Y. Shan, P. Asoka-Kumar, K.G. Lynn, Phys. Rev. B 54, 1982 (1996)
14. A.A. Dubkov, A.A. Mal'tsev, E.L. Pankratov, Technical Physics 47, 1359 (2002)
15. A.N. Malakhov, E.L. Pankratov, Radiophysics and Quantum Electronics 44, 339 (2001)