The effects of interface states on the capacitance and electroluminescence efficiency of InGaN/GaN light-emitting diodes

Semiconductors

Volumn 39, Issue 7, 2005, Pages 795-799

  Bochkareva, N I ^a   Zhirnov, E A ^b   Efremov, A A ^c   Rebane, Yu T ^a   Gorbunov, R I ^a   Klochkov, A V ^a   Lavrinovich, D A ^a   Shreter, Yu G ^a  

^a IOFFE INSTITUTE   (Russian Federation)

^b UNIVERSITY OF BATH   (United Kingdom)

^c PETER THE GREAT ST PETERSBURG POLYTECHNIC UNIVERSITY   (Russian Federation)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 23744508744     PISSN: 10637826     EISSN: None     Source Type: Journal    
DOI: 10.1134/1.1992637     Document Type: Article

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