In situ etching using a novel precursor of tertiarybutylchloride (TBCl)

Journal of Crystal Growth

Volumn 209, Issue 2-3, 2000, Pages 263-266

  Kondow, Masahiko ^a   Shi, Binqiang ^a   Tu, Charles W ^a  

^a UNIVERSITY OF CALIFORNIA   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CHEMICAL BEAM EPITAXY; CHLORINE COMPOUNDS; ETCHING; REFLECTION HIGH ENERGY ELECTRON DIFFRACTION; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTING INDIUM PHOSPHIDE; SUBSTRATES; THERMAL EFFECTS;

PRECURSORS; TERTIARYBUTYLCHLORIDE;

SEMICONDUCTOR GROWTH;

EID: 0034140209     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0022-0248(99)00552-7     Document Type: Article

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