Alloy composition control of InGaAs/InP grown by Cl-assisted MOVPE with tertiarybutylchloride

Journal of Crystal Growth

Volumn 248, Issue SUPPL., 2003, Pages 400-404

  Naniwae, Koichi ^a   Kurihara, Kaori ^a   Nishi, Kenichi ^a   Sugou, Shigeo ^a  

^a NEC CORPORATION   (Japan)

Author keywords

A3. Metalorganic vapor phase epitaxy; B1. Halogen additive; B1. InGaAs; B1. InP

Indexed keywords

ALLOYS; CHLORINE; PHOTOLUMINESCENCE; REDUCTION; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTING INDIUM COMPOUNDS; X RAY DIFFRACTION ANALYSIS;

ALLOY COMPOSITION;

METALLORGANIC VAPOR PHASE EPITAXY;

EID: 0037291254     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0022-0248(02)01832-8     Document Type: Conference Paper

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