Buffer optimization for InP-on-si (001) quasi-substrates

Conference Proceedings - International Conference on Indium Phosphide and Related Materials

Volumn , Issue , 2004, Pages 118-121

  Khorenko, V ^a   Mofor, A C ^a,b   Bakin, A ^b   Neumann, S ^a   Guttzeit, A ^b   Wehmann, H H ^b   Prost, W ^a   Schlachetzki, A ^b   Tegude, F J ^a  

^a UNIVERSITY OF DUISBURG ESSEN   (Germany)

^b TECHNICAL UNIVERSITY OF BRAUNSCHWEIG   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

CURRENT DENSITY; LOW TEMPERATURE EFFECTS; METALLORGANIC VAPOR PHASE EPITAXY; MOLECULAR BEAM EPITAXY; OPTICAL MICROSCOPY; OPTIMIZATION; SEMICONDUCTING INDIUM GALLIUM ARSENIDE; SEMICONDUCTING INDIUM PHOSPHIDE; SURFACE ROUGHNESS; TUNNEL DIODES; X RAY DIFFRACTION ANALYSIS;

CARRIER GASES; CRYSTAL QUALITY; RESONANT TUNNELING DIODES (RTD); ROOM TEMPERATURE;

SEMICONDUCTOR SUPERLATTICES;

EID: 23744484401     PISSN: 10928669     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

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