Mechanism of dopant segregation to SiO2/Si(001) interfaces

Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

Volumn 18, Issue 4, 2000, Pages 2160-2164

  Dabrowski, J ^a   Casali, R A ^a,b   Mussig H J ^a   Baierle, R ^a,c   Caldas, M J ^a,d   Zavodinsky, V ^a,e  

^a 1HP ^*  (Germany)

^b UNIVERSIDAD NACIONAL DEL NORDESTE   (Argentina)

^c FEDERAL UNIVERSITY OF SANTA MARIA   (Brazil)

^d UNIVERSITY OF SÃO PAULO   (Brazil)

^e INSTITUTE OF AUTOMATION AND CONTROL PROCESSES   (Russian Federation)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 23044522008     PISSN: 10711023     EISSN: None     Source Type: Journal    
DOI: None     Document Type: Article

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