In Situ Point Defect Generation and Agglomeration during Electron-Beam Irradiation of Nitrogen-Doped Czochralski Silicon

Electrochemical and Solid-State Letters

Volumn 6, Issue 11, 2003, Pages

  Stoddard, N ^a   Karoui, A ^a   Duscher, G ^a,b   Kvit, A ^a   Rozgonyi, G ^a  

^a North Carolina State University   (United States)

^b OAK RIDGE NATIONAL LABORATORY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

AGGLOMERATION; DOPING (ADDITIVES); ELECTRON BEAMS; NITROGEN; POINT DEFECTS;

POINT DEFECT CLUSTERS;

SILICON;

EID: 0142167960     PISSN: 10990062     EISSN: None     Source Type: Journal    
DOI: 10.1149/1.1614471     Document Type: Article

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