Valence band parameters of wurtzite materials

Solid State Communications

Volumn 99, Issue 6, 1996, Pages 423-426

  Jeon, J B ^a   Sirenko, Yu M ^a   Kim, K W ^a   Littlejohn, M A ^a   Stroscio, M A ^b  

^a North Carolina State University   (United States)

^b U S ARMY RESEARCH OFFICE   (United States)

Author keywords

A. semiconductors; D. electronic band structure

Indexed keywords

ANISOTROPY; BAND STRUCTURE; CALCULATIONS; ELECTRONIC STRUCTURE;

WURTZITE MATERIALS;

SEMICONDUCTOR MATERIALS;

EID: 0030216109     PISSN: 00381098     EISSN: None     Source Type: Journal    
DOI: 10.1016/0038-1098(96)00282-7     Document Type: Article

References (19)

1. S. Nakamura et al., Jpn. J. Appl. Phys. 35, L74 (1996); S. Nakamura et al., ibid. 34, L797, L1332 (1995); M. A. Khan et al., Proc. SPIE 2149, 254 (1994).
2. S. Nakamura et al., Jpn. J. Appl. Phys. 35, L74 (1996); S. Nakamura et al., ibid. 34, L797, L1332 (1995); M. A. Khan et al., Proc. SPIE 2149, 254 (1994).
3. S. Nakamura et al., Jpn. J. Appl. Phys. 35, L74 (1996); S. Nakamura et al., ibid. 34, L797, L1332 (1995); M. A. Khan et al., Proc. SPIE 2149, 254 (1994).
4. C. Y.-P. Chao and S. L. Chuang, Phys. Rev. B46, 4110 (1992).
5. G. L. Bir and G. E. Pikus, Symmetry and Strain-Induced Effects in Semiconductors (Wiley, New York, 1974).
6. Landoldt-Börnstein Numerical Data and Functional Relationships in Science and Technology, New Series, Vol. 17(a), edited by O. Madelung (Springer, Berlin, 1982); Vol. 22(a), edited by O. Madelung (Springer, Berlin, 1986).
7. Landoldt-Börnstein Numerical Data and Functional Relationships in Science and Technology, New Series, Vol. 17(a), edited by O. Madelung (Springer, Berlin, 1982); Vol. 22(a), edited by O. Madelung (Springer, Berlin, 1986).
8. E. I. Rashba, Fiz. Tverd. Tela 1, 407 (1959) [Sov. Phys. - Solid State 1, 368 (1959)]; E. I. Rashba and V. I. Sheka, Fiz. Tverd. Tela, Collection of papers, 162 (1959).
9. E. I. Rashba, Fiz. Tverd. Tela 1, 407 (1959) [Sov. Phys. - Solid State 1, 368 (1959)]; E. I. Rashba and V. I. Sheka, Fiz. Tverd. Tela, Collection of papers, 162 (1959).
10. E. I. Rashba, Fiz. Tverd. Tela 1, 407 (1959) [Sov. Phys. - Solid State 1, 368 (1959)]; E. I. Rashba and V. I. Sheka, Fiz. Tverd. Tela, Collection of papers, 162 (1959).
11. G. E. Pikus, ZhETF 41, 1258 (1961) [Sov. Phys. JETP 14, 898 (1962)].
12. G. E. Pikus, ZhETF 41, 1258 (1961) [Sov. Phys. JETP 14, 898 (1962)].
13. Yu. M. Sirenko, J. B. Jeon, K.W. Kim, M. A. Littlejohn and M. A. Stroscio, Phys. Rev. B53, 1997 (1996).
14. A. Kobayashi, O. F. Sankey, S. M. Volz and J. D. Dow, Phys. Rev. B28, 935 (1983).
15. S. Bloom, G. Harbeke, E. Meier and I. B. Ortenburger, Phys. Status Solidi (b) 66, 161 (1974).
16. M. Suzuki, T. Uenoyama and A. Yanase, Phys. Rev. B52, 8132 (1995); T. Uenoyama and M. Suzuki, Appl. Phys. Lett. 67, 2527 (1995).
17. M. Suzuki, T. Uenoyama and A. Yanase, Phys. Rev. B52, 8132 (1995); T. Uenoyama and M. Suzuki, Appl. Phys. Lett. 67, 2527 (1995).
18. W. Shan, I. J. Schmidt, X. H. Yang, S. J. Hwang, J. J. Song and B. Goldenberg, Appl. Phys. Lett. 66, 985 (1995); W. Shan et al., J. Appl. Phys. 79, 3691 (1996).
19. W. Shan, I. J. Schmidt, X. H. Yang, S. J. Hwang, J. J. Song and B. Goldenberg, Appl. Phys. Lett. 66, 985 (1995); W. Shan et al., J. Appl. Phys. 79, 3691 (1996).