Tailored inp-based quantum dash structures for ultra-wide gain bandwidth applications

Conference Proceedings - International Conference on Indium Phosphide and Related Materials

Volumn , Issue , 2004, Pages 96-99

  Somers, A ^a   Weichelt, Ch ^a   Schwertberger, R ^a   Reithmaier, J P ^a   Forchel, A ^a  

^a UNIVERSITY OF WÜRZBURG   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

BANDWIDTH; DESORPTION; MOLECULAR BEAM EPITAXY; MORPHOLOGY; OXIDATION; PHOTOLUMINESCENCE; SCANNING ELECTRON MICROSCOPY; SEMICONDUCTING INDIUM PHOSPHIDE;

PHOTOLUMINESCENCE SPECTROSCOPY; QUANTUM DASH STRUCTURES; SECONDARY ELECTRON MICROSCOPY; THERMAL DESORPTION;

SEMICONDUCTOR DEVICE STRUCTURES;

EID: 23744439793     PISSN: 10928669     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (7)

1. A. Bilenca, R. Alizon, V. Mikhelashvili, G. Eisenstein, R. Schwertberger, D. Gold, J.P. Reithmaier, and A. Forchel, "InAs / InP 1550 nm Quantum Dash Semiconductor Optical Amplifiers", Electron. Lett. 38 (22), pp. 1350-51 (2002).
2. A.Stintz, T.J.Rotter, K.J.Malloy; "Formation of quantum wires and quantum dots on buffer layers grown on InP substrates"; J. cryst. Growth 255 (2003) 266-272.
3. K.Park, H.Hwang, J.-H.Kang, S.Yoon, Y.D.Kim, E.Yoon; "Real time in situ monitoring of stacked InAs/InP quantum dots by spectral reflectance"; J. cryst. growth 248 (2003) 201-205.
4. R. Schwertberger, D. Gold, J.P. Reithmaier, A. Forchel; "Epitaxial growth of 1.55 μm emitting InAs quantum dashes on InP-based heterostructures by GS-MBE for long-wavelength laser applications"; J. cryst. Growth 251 (2003) 248-252.
5. R. Schwertberger, D. Gold, J.P. Reithmaier, A. Forchel; "Long-wavelength InP-based quantum-dash lasers"; Proc. IEEE, Vol. 14, No. 6, pp.735-737, June 2002.
6. R. Schwertberger, D. Gold, J.P. Reithmaier, A. Forchel; "Self-assembled quantum-dash lasers on the InP system"; Proc. IPRM (2002)
7. G. Balakrishnan, S. Huang, T. J. Rotter, A. Stintz, L.R. Dawson, K. J. Malloy, H. Xu, D. L. Huffaker; "2 μm wavelength InAs quantum dashes grown on a GaAs substrate using a metamorphic buffer layer"; Appl. Phys. Lett., Vol. 84, No. 12, pp. 2058-2060, March 2004.