Alternative USJ formation and characterization methods for 45 nm node technology

Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms

Volumn 237, Issue 1-2, 2005, Pages 6-11

  Borland, John O ^a  

^a JOB Technologies   (United States)

Author keywords

Deposition; Energy contamination; Four point probe; Infusion; Molecular dopant species; Strain Si

Indexed keywords

ANNEALING; BORON; DEPOSITION; DIFFUSION; GATES (TRANSISTOR); PRODUCTIVITY; SEMICONDUCTOR DOPING; SILICON;

ENERGY CONTAMINATION; FOUR POINT PROBE; INFUSION; MOLECULAR DOPANT SPECIES; STRAIN-SI;

SEMICONDUCTOR JUNCTIONS;

EID: 23444454360     PISSN: 0168583X     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.nimb.2005.04.106     Document Type: Conference Paper

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