High-dose V+ implantation in ZnO thin film structures

Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms

Volumn 237, Issue 1-2, 2005, Pages 179-182

  Vyatkin, A F ^a   Zinenko, V I ^a   Agaphonov, Yu A ^a   Pustovit, A N ^a   Roshchupkin, D V ^a   Reuss, F ^b   Kirchner, C ^b   Kling, R ^b   Waag, A ^b,c  

^a RUSSIAN ACADEMY OF SCIENCES   (Russian Federation)

^b UNIVERSITY OF ULM   (Germany)

^c TECHNICAL UNIVERSITY OF BRAUNSCHWEIG   (Germany)

Author keywords

Ion implantation; Magnetic semiconductors; Optical properties; Radiation damage

Indexed keywords

DOPING (ADDITIVES); FERROMAGNETIC MATERIALS; ION IMPLANTATION; MAGNETIC SEMICONDUCTORS; OPTICAL PROPERTIES; PHOTOLUMINESCENCE; RADIATION DAMAGE; SECONDARY ION MASS SPECTROMETRY; THIN FILMS; X RAY DIFFRACTION ANALYSIS; ZINC OXIDE;

ION CURRENT DENSITY; LASER DEPOSITION TECHNIQUE; SAPPHIRE SUBSTRATES; SPINTRONICS;

VANADIUM;

EID: 23444442755     PISSN: 0168583X     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.nimb.2005.04.097     Document Type: Conference Paper

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