In situ beam angle measurement in a multi-wafer high current ion implanter

Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms

Volumn 237, Issue 1-2, 2005, Pages 378-383

  Freer, B S ^a   Reece, R N ^a   Graf, M A ^a   Parrill, T ^a   Polner, D ^a  

^a AXCELIS TECHNOLOGIES   (United States)

Author keywords

High current implantation; Implant angle control

Indexed keywords

ANGLE MEASUREMENT; CORRELATION METHODS; ELECTRIC CURRENTS; ION BEAMS; MAGNETS; SENSITIVITY ANALYSIS; TUNING;

ENERGY BEAMS; HIGH CURRENT IMPLANTATION; IMPLANT ANGLE CONTROL; TUNING VARIATIONS;

ION IMPLANTATION;

EID: 23444441148     PISSN: 0168583X     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.nimb.2005.05.035     Document Type: Conference Paper

References (8)

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