Growth of LiGaO2 as a substrate of GaN by temperature gradient technique

Guangxue Xuebao/Acta Optica Sinica

Volumn 22, Issue 6, 2002, Pages 761-764

  Yang, Weiqiao ^a   Gan, Fuxi ^a   Deng, Peizhen ^a   Zhou, Yongzong ^a   Xu, Jun ^a   Li, Shuzhi ^a   Jiang, Chengyong ^a  

^a INSTITUTE OF GEOLOGY AND GEOPHYSICS   (China)

Author keywords

GaN; LiGaO2; Temperature gradient technique

Indexed keywords

LITHIUM COMPOUNDS; SEMICONDUCTING GALLIUM COMPOUNDS; X RAY DIFFRACTION ANALYSIS;

TEMPERATURE GRADIENT TECHNIQUE;

CRYSTAL GROWTH;

EID: 0036622132     PISSN: 02532239     EISSN: None     Source Type: Journal    
DOI: None     Document Type: Article

References (5)

1. 2 single crystals for a substrate of hexagonal GaN thin films
2. 2 substrates using tertiarybutylhydrazine
3. 2 crystal
4. 2
5. 2 single crystal: A novel substrate for GaN epitaxy