Injection lasers based on InGaAs quantum dots in an AIGaAs matrix

Journal of Electronic Materials

Volumn 27, Issue 3, 1998, Pages 106-109

  Zhukov, A E ^a   Ustinov, V M ^a   Egorov, A Yu ^a   Kovsh, A R ^a   Tsatsul'nikov, A F ^a   Maximov, M V ^a   Ledentsov, N N ^a   Zaitsev, S V ^a   Gordeev, N Yu ^a   Kopchatov, V I ^a   Shernyakov, Y M ^a   Kop'ev, P S ^a   Bimberg, D ^b   Alferov, Zh I ^a  

^a IOFFE INSTITUTE   (Russian Federation)

^b TECHNISCHE UNIVERSITÄT BERLIN   (Germany)

Author keywords

Continuous wave (CW) operation; InGaAs; Injection laser; Quantum dot; Threshold current

Indexed keywords

CURRENT DENSITY; ENERGY GAP; FERMI LEVEL; INJECTION LASERS; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTING INDIUM COMPOUNDS; THERMAL EFFECTS;

THRESHOLD CURRENTS;

SEMICONDUCTOR QUANTUM DOTS;

EID: 0032028198     PISSN: 03615235     EISSN: None     Source Type: Journal    
DOI: 10.1007/s11664-998-0198-9     Document Type: Article

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