Reduction of stacking faults in the ZnSe/GaAs heterostructure with a low-temperature-grown ZnSe buffer layer

Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

Volumn 22, Issue 2, 2004, Pages 607-610

  Song, J S ^a   Oh, D C ^b   Makino, H ^b   Hanada, T ^b   Cho, M W ^b   Yao, T ^b   Park, Y G ^b   Shindo, D ^b   Chang, J H ^c  

^a NeosemiTech Corporation   (South Korea)

^b TOHOKU UNIVERSITY   (Japan)

^c Korea Maritime University   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

DISLOCATIONS (CRYSTALS); ELECTRONIC PROPERTIES; EPITAXIAL GROWTH; HIGH TEMPERATURE EFFECTS; INTERFACES (MATERIALS); MOLECULAR BEAM EPITAXY; PHOTOLUMINESCENCE; REFLECTION HIGH ENERGY ELECTRON DIFFRACTION; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTING ZINC COMPOUNDS; STACKING FAULTS; THIN FILMS; TRANSMISSION ELECTRON MICROSCOPY; X RAY DIFFRACTION ANALYSIS;

BUFFER LAYERS; CHEMICAL VALENCE MISMATCH; LATTICE MISMATCH; STACKING FAULT DENSITIES;

HETEROJUNCTIONS;

EID: 2342628548     PISSN: 10711023     EISSN: None     Source Type: Journal    
DOI: 10.1116/1.1651555     Document Type: Article

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