Temperature dependence of tris(2,2′-bipyridine) ruthenium (II) device characteristics

Journal of Applied Physics

Volumn 95, Issue 8, 2004, Pages 4381-4384

  Slinker, Jason D ^a   Malliaras, George G ^a   Flores Torres, Samuel ^b   Abruña, Héctor D ^b   Chunwachirasiri, Withoon ^c   Winokur, Michael J ^c  

^a School of Operations Research and Industrial Engineering   (United States)

^b Department of Molecular Biology and Genetics   (United States)

^c Wisconsin Electric Machines and Power Electronics Consortium   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

HOLE CURRENTS; QUANTUM YIELD; RADIANCE; THERMAL ACTIVATION;

ACTIVATION ENERGY; DEGRADATION; ELECTROLUMINESCENCE; LIGHT EMITTING DIODES; MATHEMATICAL MODELS; OPTICAL PROPERTIES; PHOTOLUMINESCENCE; QUANTUM EFFICIENCY; QUANTUM THEORY; QUENCHING; RUTHENIUM COMPOUNDS; SUBSTRATES;

LUMINESCENT DEVICES;

EID: 2342590167     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1687990     Document Type: Article

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