Heterojunction In0.53Ga0.47As/InP magnetic field sensors fabricated by molecular beam epitaxy

Optica Applicata

Volumn 32, Issue 3, 2002, Pages 511-515

  Przesławski, Tomasz ^a   Wolkenberg, Andrzej ^a,b   Regiński, Kazimierz ^a   Kaniewski, Janusz ^a  

^a ukasiewicz Research Network Institute of Microelectronics and Photonics   (Poland)

^b CZESTOCHOWA UNIVERSITY OF TECHNOLOGY   (Poland)

Author keywords

[No Author keywords available]

Indexed keywords

GALVANOMAGNETIC EFFECTS; MOLECULAR BEAM EPITAXY; SEMICONDUCTING INDIUM COMPOUNDS; SEMICONDUCTING INDIUM PHOSPHIDE; SENSORS;

MAGNETIC FIELD SENSORS;

HETEROJUNCTIONS;

EID: 0036934944     PISSN: 00785466     EISSN: None     Source Type: Journal    
DOI: None     Document Type: Conference Paper

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