메뉴 건너뛰기




Volumn 71, Issue 6, 1997, Pages 823-825

Free electron laser annealing of N-ion-implanted 3C-SiC films

Author keywords

[No Author keywords available]

Indexed keywords


EID: 0007389453     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.119668     Document Type: Article
Times cited : (5)

References (11)
  • 1
    • 0009737293 scopus 로고
    • edited by G. L. Harris Short Run Press, Exeter
    • G. L. Harris, in Properties of Silicon Carbide, edited by G. L. Harris (Short Run Press, Exeter, 1995), p. vii.
    • (1995) Properties of Silicon Carbide
    • Harris, G.L.1
  • 10
    • 85033304559 scopus 로고    scopus 로고
    • Hoya Corporation, Musashino, Akishima-shi, Tokyo 196, Japan
    • Hoya Corporation, Musashino, Akishima-shi, Tokyo 196, Japan.


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.