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Volumn 6, Issue 12, 1997, Pages 1772-1776
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Infra-red characterization of carbonization of Si surfaces by gas source molecular beam epitaxy
a a b b c d |
Author keywords
Carbonization of SiC layers; Epitaxial SiC films; Gas MBE growth; IR reflectivity
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Indexed keywords
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EID: 0041720952
PISSN: 09259635
EISSN: None
Source Type: Journal
DOI: 10.1016/S0925-9635(97)00138-6 Document Type: Article |
Times cited : (4)
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References (11)
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