메뉴 건너뛰기




Volumn 6, Issue 12, 1997, Pages 1772-1776

Infra-red characterization of carbonization of Si surfaces by gas source molecular beam epitaxy

Author keywords

Carbonization of SiC layers; Epitaxial SiC films; Gas MBE growth; IR reflectivity

Indexed keywords


EID: 0041720952     PISSN: 09259635     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0925-9635(97)00138-6     Document Type: Article
Times cited : (4)

References (11)


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.