Possible influence of the Schottky contacts on the characteristics of ultrathin SOI pseudo-MOS transistors

IEEE Transactions on Electron Devices

Volumn 52, Issue 8, 2005, Pages 1807-1814

  Sato, Shingo ^a   Komiya, Kenji ^a   Bresson, Nicolas ^b,c   Omura, Yasuhisa ^a   Cristoloveanu, Sorin ^c  

^a KANSAI UNIVERSITY   (Japan)

^b PARC TECHNOLOGIQUE DES FONTAINES   (France)

^c IMEP LAHC   (France)

Author keywords

Flat band voltage; Inversion layer; Pseudo MOS; Schottky contact; Silicon on insulator (SOI); Thin film; Threshold voltage

Indexed keywords

COMPUTER SIMULATION; ELECTRIC CONTACTS; POISSON EQUATION; SEMICONDUCTOR DEVICE MODELS; SILICON ON INSULATOR TECHNOLOGY; THRESHOLD VOLTAGE; ULTRATHIN FILMS;

FLAT BAND VOLTAGE; INVERSION LAYER; SCHOTTKY CONTACT;

MOSFET DEVICES;

EID: 23344437826     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/TED.2005.852173     Document Type: Article

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