Characterization of ultra-thin SOI films for double-gate MOSFETs

IEEE International SOI Conference

Volumn , Issue , 2002, Pages 187-188

  Allibert, Fredric ^a,b   Vinet, M ^c   Lolivier, J ^c   Deleonibus, S ^c   Cristoloveanu, S ^a  

^a GRENOBLE INSTITUTE OF TECHNOLOGY   (France)

^b PARC TECHNOLOGIQUE DES FONTAINES   (France)

^c CEA LETI   (France)

Author keywords

[No Author keywords available]

Indexed keywords

GATES (TRANSISTOR); INTERFACES (MATERIALS); SILICON ON INSULATOR TECHNOLOGY; ULTRATHIN FILMS;

DOUBLE GATE MOSFETS;

MOSFET DEVICES;

EID: 0036454613     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/soi.2002.1044470     Document Type: Conference Paper

References (4)

1. F. Allibert et al., IEEE Int. SOI Conf., 2001.
2. J.M. Hartmann et al., J.Crystal Growth, 236, p. 10, 2002.
3. S. Cristoloveanu et al., IEEE Trans. ED-47, p. 1018, 2000.
4. G. Ghibaudo, Electron. Lett., 24, pp. 543-544, 1988.