Truly ohmic contacts in engineered Al/Si/InGaAs(001) diodes

Applied Physics Letters

Volumn 72, Issue 16, 1998, Pages 1996-1998

  De Franceschi, Silvano ^a   Beltram, Fabio ^a   Marinelli, Claudio ^b   Sorba, Lucia ^b   Lazzarino, Marco ^b   Müller, Bernhard H ^b   Franciosi, Alfonso ^b  

^a INFM   (Italy)

^b LABORATORIO TASC   (Italy)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0000093504     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.121244     Document Type: Article

References (13)

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12. * and ε were obtained by linear interpolation between the corresponding InAs and GaAs parameters.
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