Correlation between Si-related and erbium photoluminescence bands and determination of erbium effective excitation cross section in SiO 2 films

Journal of Applied Physics

Volumn 98, Issue 1, 2005, Pages

  Kao, C C ^a   Barthou, C ^a   Gallas, B ^a   Fisson, S ^a   Vuye, G ^a   Rivory, J ^a   Al Choueiry, A ^b   Jurdyc, A M ^b   Jacquier, B ^b   Bigot, L ^c  

^a INSTITUT DES NANOSCIENCES DE PARIS   (France)

^b CNRS   (France)

^c UNIVERSITÉ DES SCIENCES ET TECHNOLOGIES DE LILLE   (France)

Author keywords

[No Author keywords available]

Indexed keywords

EXCITATION CROSS SECTION; NANOCRYSTALS; SENSITIZERS; SPECTROSCOPIC ELLIPSOMETRY;

CONCENTRATION (PROCESS); DOPING (ADDITIVES); ELLIPSOMETRY; ERBIUM; EVAPORATION; METALLIC FILMS; PHOTOLUMINESCENCE; REDUCTION; RUTHERFORD BACKSCATTERING SPECTROSCOPY; SEMICONDUCTING FILMS; SEMICONDUCTOR DOPING;

SILICA;

EID: 23044502278     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1968429     Document Type: Article

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