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Volumn 488, Issue 1-2, 2005, Pages 98-102

Field-induced resistance-switching of La0.7Ca 0.3MnO3-δ films epitaxially grown on Ir/MgO buffered Si (001) substrates

(5) Chen, Tong Lai a,b Li, Xiao Min a Dong, Rui a,b Wang, Qun a Chen, Li Dong a

a SHANGHAI INSTITUTE OF CERAMICS (China)

b UNIVERSITY OF CHINESE ACADEMY OF SCIENCES (China)

Author keywords

Electrical properties and measurements; Pulse laser deposition; Reflection high energy electron diffraction; X ray diffraction

Indexed keywords

ELECTRIC FIELD EFFECTS; ELECTRIC RESISTANCE; EPITAXIAL GROWTH; FILM GROWTH; IRIDIUM; LANTHANUM COMPOUNDS; MAGNESIA; MAGNETIC FIELD EFFECTS; MAGNETORESISTANCE; PULSED LASER DEPOSITION; REFLECTION HIGH ENERGY ELECTRON DIFFRACTION; SILICON; SUBSTRATES; SWITCHING; X RAY DIFFRACTION;

CURIE TEMPERATURE; ELECTRIC PULSES; ELECTRICAL PROPERTIES AND MEASUREMENTS; NONVOLATILE MEMORY (NVM);

THIN FILMS;

EID: 23044476684 PISSN: 00406090 EISSN: None Source Type: Journal
DOI: 10.1016/j.tsf.2005.04.115 Document Type: Article

Times cited : (8)

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