Influence of metal induced crystallization parameters on the performance of polycrystalline silicon thin film transistors

Thin Solid Films

Volumn 487, Issue 1-2, 2005, Pages 102-106

  Pereira, L ^a   Barquinha, P ^a   Fortunato, E ^a   Martins, R ^a  

^a UNIVERSIDADE NOVA DE LISBOA   (Portugal)

Author keywords

Metal induced crystallization; Polycrystalline silicon; Thin film transistors

Indexed keywords

CRYSTALLIZATION; LIQUID CRYSTAL DISPLAYS; NICKEL; NUCLEATION; POLYSILICON; THERMAL EFFECTS; THIN FILM TRANSISTORS; THRESHOLD VOLTAGE;

ACTIVE MATRIX LIQUID CRYSTAL DISPLAY (AMLCD); ELECTRONIC CIRCUITS; METAL INDUCED CRYSTALLIZATION; PROCESSING TEMPERATURE;

THIN FILMS;

EID: 22944482823     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.tsf.2005.01.045     Document Type: Conference Paper

References (10)

1. S.Y. Yoon, S.J. Park, K.H. Kim, and J. Jang Thin Solid Films 383 2001 34
2. S.I. Muramatsu, Y. Minagawa, F. Oka, T. Sasaki, and Y. Yazawa Sol. Energy Mater. Sol. Cells 74 2002 275
3. G. Harbeke, L. Krausbauer, E.F. Steigmeier, A.E. Widmer, H.F. Kappert, and G. Neugebauer J. Electrochem. Soc. 131 1984 675
4. K.H. Kim, S.J. Park, A.Y. Kim, and J. Jang J. Non-Cryst. Solids 299-302 2002 83
5. J. Jang Y. Kuo Thin film transistors-materials and processes Polycrystalline silicon thin film transistors vol. 2 2004 Kluwer Academic Publishers Norwell
6. H. Águas, V. Silva, E. Fortunato, S. Lebib, P. Roca, I. Cabarrocas, I. Ferreira, L. Guimarães, and R. Martins Jpn. J. Appl. Phys. 42 2003 4935
7. E. Fortunato, P. Barquinha, A. Pimentel, A. Gonçalves, A. Marques, R. Martins, and L. Pereira Appl. Phys. Lett. 85 13 2004 2541
8. J. Jang C.R. Kagan P. Andry Thin film transistors 2003 Marcel Dekker, Inc. New York 35
9. S. Zhang, C. Zhu, J.K.O. Sin, J.N. Li, and P.K.T. Mok IEEE Trans. Electron Devices 47 2000 569
10. J. Kanicki, and S. Martin C.R. Kagan P. Andry Thin film transistors 2003 Marcel Dekker, Inc. New York 71