Influence of precursors gases on LPCVD TFT's characteristics

Thin Solid Films

Volumn 427, Issue 1-2, 2003, Pages 108-112

  Rogel, R ^a,b   Gautier, G ^a   Coulon, N ^a   Sarret, M ^a   Bonnaud, O ^a  

^a UNIVERSITÉ DE RENNES 1   (France)

^b NONE   (France)

Author keywords

LPCVD; TFT

Indexed keywords

AMORPHOUS FILMS; ANNEALING; CHEMICAL VAPOR DEPOSITION; CRYSTALLIZATION; HALL EFFECT; SEMICONDUCTING FILMS; THRESHOLD VOLTAGE;

LOW PRESSURE CHEMICAL VAPOR DEPOSITION (LPCVD);

THIN FILM TRANSISTORS;

EID: 0037416637     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0040-6090(02)01151-3     Document Type: Conference Paper

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