Double-poly EEPROM cell for high density memories using positive and negative voltage programming

European Solid-State Device Research Conference

Volumn , Issue , 1996, Pages 693-696

  Pio, F ^a   Paruzzi, P ^a   Baldi, L ^a   Riva, C ^a  

^a STMICROELECTRONICS   (Italy)

Author keywords

[No Author keywords available]

Indexed keywords

EEPROM CELLS; HIGH DENSITY MEMORY; NEGATIVE VOLTAGE;

EID: 84920720071     PISSN: 19308876     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (4)

1. F. Masuoka et al: IEICE Trans.BZ4, 868 (1991)
2. S. Haddad et al.: IEEE El. Dev. Lett. 10. 117 (1989)
3. G. Papadas et al.: J. Appl. Phys. 21, 4589 (1992)
4. L. Ravazzi et al.: Proc. ESREF90, 305-Bari-ITALY (1990)