Extraction of coupling ratios for Fowler-Nordheim programming conditions

Solid-State Electronics

Volumn 45, Issue 2, 2001, Pages 235-242

  Duane, Russell ^a   Concannon, Ann ^a   O'Sullivan, Paula ^a   O'Shea, Mike ^a   Mathewson, Alan ^a  

^a UNIVERSITY COLLEGE CORK   (Ireland)

Author keywords

[No Author keywords available]

Indexed keywords

COMPUTER SIMULATION; GATES (TRANSISTOR);

COUPLING RATIOS; FLOATING GATE VOLTAGE; FOWLER-NORDHEIM PROGRAMMING;

NONVOLATILE STORAGE;

EID: 0035246933     PISSN: 00381101     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0038-1101(00)00278-1     Document Type: Article

References (13)

1. Crisenza G. Proc ESSDERC. 1991. p. 121.
2. Kolodny A., Nieh S., Eitan B., Shappir J. IEEE Trans Electron Dev. 33:1986;835.
3. Roy A, Kazeerounian R, Eitan B. Non-volatile memory conference 1991.
4. Prall K., Kinney W., Macro J. IEEE Trans Electron Dev. 34:1987;2463.
5. Tamer-San K, Kaya C, Liu D, Mabrs T-P, Shah P. IEEE Electron Dev Lett 1992;13:328.
6. Wada M, Mimura S, Nihira H, Iizuka H. IEDM Tech Dig 1980:38.
7. Pio F. Proc ESSDERC. 1996. p. 693.
8. Wong M., Liu D.K.-.Y., Huang S.S.-.W. IEEE Electron Dev Lett. 13:1992;566.
9. Duane R, Concannon A, O'Sullivan P, Mathewson A. Proc ESSDERC. 1998. p. 301.
10. Baccarani G, Guerrieri R, Ciampolini P, Rudan M. In: Miller JJH (Ed.), NASECODE IV. Dublin: Boole Press; 1985. p. 3.
11. Concannon A., Keeney S., Mathewson A., Bez R., Lombardi C. IEEE Trans Electron Dev. 40:1993;1258.
12. Keeney S., Bez R., Cantarelli D., Piccinini F., Mathewson A., Ravazzi L., Lombardi C. IEEE Trans Electron Dev. 39:1992;2750.
13. Duffy R, Concannon A, Mathewson A, deGraaf C, Slotboom M, Verhar R. Proc SISPAD. 1998. p. 376.